摘要
采用磁控溅射和光刻技术制备了1μm×1μm的Ti N/Hf O2/ITO(氧化铟锡)3层结构的器件,通过控制改变正负细丝形成(forming)电压的操作方式来研究其阻变性能。研究结果表明,在上述的两种操作模式下,当保持操作端不变时导电细丝的形成与断裂均发生在ITO端操作,且从电流-电压(I-V)循环曲线中均发现了器件具有自限流特性。同时,文中比较了氧化铟锡(ITO)和铂(Pt)两种电极下,存储器单元阻变性能的差别。结合电流-电压循环曲线的拟合机制,推断出自限流特性来源于氧化铟锡(ITO)电极与氧化铪基阻变层之间形成的界面层。进一步设计了基于氧化铟锡(ITO)电极下的氧化硅/氧化铪双层结构阻变层的器件,发现该器件仍具有自限流效应。而且,氧化硅层同样起到了降低操作电流的作用,故使得器件的功耗大幅度降低至16μW。
TiN/HfO_2/ ITO resistive random access memory（ RRAM） device with an area of 1 μm × 1 μm was fabricated by lithography and sputtering technology. Positive and negative forming voltages were applied to investigate the resistive behavior of the device. It was found that under both of the two forming processes,the formation / disruption of conductive filaments occurred at the indium tin oxide（ ITO） electrode,and self-compliance current phenomenon was observed from the current-voltage（ I-V） cyclic curves. Meanwhile,the effect of ITO and Pt electrodes on resistive switching characteristic was demonstrated. By I-V cyclic curves fitting analysis,the selfcompliance current phenomenon originated from the interface layer between ITO electrode and HfO_2 layer. Moreover,SiO_2/ HfO_2 bilayer memory cell was designed for ITO electrode,which also exhibited self-compliance current behavior. In addition,the switching current was significantly reduced and the low switching power of 16 μW was obtained.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2016年第3期236-242,共7页
Chinese Journal of Rare Metals
基金
国家自然科学基金项目(61474039)
湖北省自然科学基金杰出青年基金项目(2015 CFA052)资助
关键词
阻变存储器
自限流特性
操作电流
ITO电极
resistive random access memory（RRAM）
self-compliance current phenomenon
switching current
indium tin oxide（ITO） electrode
