摘要
以半导体纳米材料CdSe/ZnS作为发光层,ZnO作为电子传输层,用Al和氧化铟锡(ITO)分别作为两极材料,采用旋涂和真空蒸镀膜技术制备半导体发光二极管,并对其光学性质进行表征.结果表明:该器件发射黄光,峰位为575nm,半峰宽30nm,最大发光强度2 000cd/m^2;在较高的电流密度下,该器件的电致发光效率无明显衰减;当半导体纳米材料CdSe/ZnS及ZnO分别作为发光层和电子传输层时,可制备具有高电流密度且稳定的发光二极管主体材料.
We used CdSe/ZnS semiconductor nanometerials as light-emitting layers,ZnO as electrontransport layer（ETL）,Al and ITO as bipolar materials.The semiconductor light-emitting diodes（LED）were prepared by spin coating and vacuum evaporation coating technology.We characterized its optical properties.The experimental results show that the device emits yellow light,the peak position is 575 nm,the full width half maximum is 30 nm,the maximum luminous intensity is2 000cd/m^2,the luminescence efficiency of device has no obvious decay under higher current density,and semiconductor materials CdSe/ZnS and ZnO are desired materials as light-emitting layer and electron transport layer of LED with high current density and stable emitting.
出处
《吉林大学学报（理学版）》
CAS
CSCD
北大核心
2016年第3期631-634,共4页
Journal of Jilin University:Science Edition
基金
吉林省自然科学基金(批准号:JC20130101132)
吉林省教育厅"十二五"科学技术研究项目(批准号:2013-317)
吉林市科技局科技项目(批准号:201464057)
关键词
半导体纳米材料
电致发光
发光二极管
显示器件
semiconductor nanomaterial
electro luminescence
light-emitting diode（LED）
display device
