摘要
In this work, atomic layer deposition （ALD） was employed to fabricate coaxial multi-interface hollow Ni-A12OB-ZnO nanowires. The morpholog34 microstructure, and ZnO shell thickness dependent electromagnetic and microwave absorbing properties of these Ni-A12OB-ZnO nanowires were characterized. Excellent microwave absorbing properties with a minimum reflection loss （RL） of approximately -50 dB at 9.44 GHz were found for the Ni-A12OB-100ZnO nanowires, which was 10 times of Ni-A1203 nanowires. The microwave absorption frequency could be effectively varied by simply adjusting the number of ZnO deposition cycles. The absorption peaks of Ni-A1203-100ZnO and Ni-A12OB-150ZnO nanowires shifted of 5.5 and 6.8 GHz towards lower frequencies, respectively, occupying one third of the investigated frequency band. The enhanced microwave absorption arose from multiple loss mechanisms caused by the unique coaxial multi-interface structure, such as multi-interfacial polarization relaxation, natural and exchange resonances, as well as multiple internal reflections and scattering. These results demonstrate that the ALD method can be used to realize tailored nanoscale structures, making it a highly promising method for obtaining high- efficiency microwave absorbers, and opening a potentially novel route for frecluencv adiustment and microwave ima^in~ fields.
In this work, atomic layer deposition （ALD） was employed to fabricate coaxial multi-interface hollow Ni-A12OB-ZnO nanowires. The morpholog34 microstructure, and ZnO shell thickness dependent electromagnetic and microwave absorbing properties of these Ni-A12OB-ZnO nanowires were characterized. Excellent microwave absorbing properties with a minimum reflection loss （RL） of approximately -50 dB at 9.44 GHz were found for the Ni-A12OB-100ZnO nanowires, which was 10 times of Ni-A1203 nanowires. The microwave absorption frequency could be effectively varied by simply adjusting the number of ZnO deposition cycles. The absorption peaks of Ni-A1203-100ZnO and Ni-A12OB-150ZnO nanowires shifted of 5.5 and 6.8 GHz towards lower frequencies, respectively, occupying one third of the investigated frequency band. The enhanced microwave absorption arose from multiple loss mechanisms caused by the unique coaxial multi-interface structure, such as multi-interfacial polarization relaxation, natural and exchange resonances, as well as multiple internal reflections and scattering. These results demonstrate that the ALD method can be used to realize tailored nanoscale structures, making it a highly promising method for obtaining high- efficiency microwave absorbers, and opening a potentially novel route for frecluencv adiustment and microwave ima^in~ fields.
