摘要
选用二氧化硅抛光液抛光4H导电SiC晶片表面,探究影响SiC晶片表面质量的关键参数,获得更高的去除效率和表面质量。实验结果表明,SiC表面的氧化是氢氧根离子和双氧水共同作用的结果。保持压力不变并增加氢氧根离子或双氧水的含量,SiC表面去除速率先增加后保持不变。在更大的压力下增加氢氧根离子的含量,SiC表面的抛光去除速率进一步增加。通过优化的抛光参数,SiC表面的抛光去除速率达到142 nm/h。进一步研究结果表明,保持化学机械抛光过程中氧化作用与机械作用相匹配,是获得高抛光效率和良好的表面质量的关键。表面缺陷检测仪(Candela)和原子力显微镜(AFM)的测试结果表明,SiC抛光片表面无划痕,粗糙度达到0.06 nm。外延后总缺陷密度小于1个/cm2,粗糙度达到0.16 nm。
Colloidal silica slurry was used for chemical mechanical polishing （CMP） 4H-type conductive SiC surface to explore the key parameters affecting the surface quality of SiC substrates and obtain higher material removal rate and defect-free surface. The results indicate that SiC surface interact with both hydrogen peroxide （H2O2 ） and hydroxyl ion （ OH - ） to form softer oxidations. The removal rate of SiC increase firstly and then remain unchange when the content of H2O2 or OH- is increase under a certain pressure. The removal rate of SiC increase further when the content of OH- is increase under a higher pressure. By optimizing the polishing parameters, the polishing removal rate of SiC is increased to 142 nm/h. The results show that keeping the balance of chemical and mechanical influence is a key factor to obtain the high removal rate and defect free SiC surface. The results of optical surface analyzer （Candela） and atomic force microscope （AFM） show that the wafer surface has no Scratch and the surface roughness is 0.06 nm. The densities of defects are less than 1/cm2 and the surface roughness is0. 16 nm after epitaxial growing a film of SiC.
出处
《人工晶体学报》
CSCD
北大核心
2017年第5期759-765,共7页
Journal of Synthetic Crystals
基金
国家科技部高技术研究发展计划"863计划"(2014AA041402)
北京市科技新星计划项目(Z141103001814088)
新疆兵团重点领域创新团队计划
关键词
碳化硅
化学机械抛光
PH值
压力
双氧水
silicon carbide
chemical mechanical polishing
pH value
pressure
H2O2
