摘要
本文利用CGSim晶体生长软件分析了不同磁场结构对直拉单晶硅中碳杂质含量的影响。结果表明,气氛中的碳原子主要通过熔体自由表面上靠近坩埚壁一侧区域扩散进熔体。通过调节对称磁场和非对称磁场的结构参数来抑制碳原子掺入区域的对流强度,增大碳原子扩散层的厚度,进而降低熔体中的碳原子浓度,最终获得低碳含量的直拉单晶硅。
In this paper, the CGSim crystal growth software was employed to evaluate the effect of various magnetic field structures on carbon impurity in silicon melt. The results show that, the carbon atoms in the atmosphere is preferably diffused into silicon melt from melt free surface closed to the crucible sidewall. By optimizing the parameters of axisymmetric and asymmetric magnetic fields, the melt convection strength beneath melt free surface has been suppressed, resulting in the increase of diffusion layer of carbon atom. In turn, a high quality of single crystal silicon with low carbon concentration has been obtained owing to the lower impurity content of carbon.Key word
出处
《人工晶体学报》
CSCD
北大核心
2017年第11期2119-2124,共6页
Journal of Synthetic Crystals
基金
宁夏高等学校科学技术研究项目(NGY2015032)
关键词
单晶硅
勾型磁场
熔体流动
洛伦兹力
碳浓度
single crystal silicon
cusp magnetic field
melt convection
Lorenz force
carbon concentration
