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Eu_2O_3掺杂量及烧结温度对氧化铝基微波陶瓷性能的影响 被引量:3

Influences of Eu_2O_3 Doping Amount and Sintering Temperature on Properties of Al_2O_3-based Microwave Ceramic Materials
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摘要 选用MgO-CuO-TiO_2-Eu_2O_3添加剂作为氧化铝陶瓷的烧结助剂,在空气气氛下经过常压烧结制备Al_2O_3陶瓷。采用XRD,SEM及EDS等方法研究Eu_2O_3掺杂量以及烧结温度对Al_2O_3基微波陶瓷样品物相组成,微观结构和介电性能的影响。结果表明:添加Eu_2O_3的Al_2O_3陶瓷中,均存在Al2Eu2O9次晶相,且随着Eu_2O_3含量的增加,Al2Eu2O9相增加;随着Eu_2O_3添加量的增加,Al_2O_3陶瓷试样致密度先增加后降低;随着烧结温度的增加,Al_2O_3陶瓷的介电常数和品质因数Q·f值先增加后降低。烧结温度为1450℃,Eu_2O_3添加量为0.25%(质量分数)时,烧结体的相对密度达到最大值98.21%,且Al_2O_3陶瓷的介电性能较好:介电常数为10.05,品质因数Q·f为37984GHz。 A kind of alumina ceramic was prepared by atmospheric pressure sintering under air atmosphere using MgO-CuO-TiO2-Eu2O3 as sintering additive.The effect of Eu2O3 doping amount and sintering temperature on the phase composition,microstructure as well as dielectric properties of Al2O3-based microwave ceramic samples was studied by XRD,SEM and EDS.The results show that the Al2 Eu2 O9 secondary crystalline phase is present in all Al2O3 ceramics with Eu2O3 addition,and the Al2 Eu2 O9 phase is enhanced with the increase of Eu2O3 content.With higher Eu2O3 content,the density of Al2O3 ceramics increases first and then decreases.As sintering temperature increases,the dielectric constant and quality factor Q·fof Al2O3 ceramics increase first and then decrease.When the sintering temperature rises up to 1450℃ and the content of Eu2O3 is 0.25%(mass fraction),the relative density of the sintered body reaches to the maximum of 98.21%,and the dielectric properties of the Al2O3 ceramics are superior with the dielectric constant 10.05 and the quality factor Q ·f37984 GHz.
作者 亢静锐 董桂霞 吕易楠 李雷 韩伟丹 张茜 KANG Jing-rui;DONG Gui-xia;LYU Yi-nan;LI Lei;HAN Wei-dan;ZHANG Xi(Hebei Provincial Key Laboratory of Inorganic Nonmetallic Materials,College of Materials Science and Engineering,North China University of Science and Technology,Tangshan 063210,Hebei,China)
出处 《材料工程》 EI CAS CSCD 北大核心 2018年第8期78-83,共6页 Journal of Materials Engineering
基金 国家国际科技合作计划(2014DFR50570)
关键词 氧化铝陶瓷 Eu2O3掺杂 致密度 介电性能 alumina ceramic Eu2O3 doping density dielectric property
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