摘要
利用近似重位点原理研究了离子注入法制备的 β FeSi2 半导体薄膜和Si基体之间的取向关系(OR)。透射电子显微镜分析结果表明膜基之间最常见的取向关系为 (2 0 0 )β (2 0 0 ) Si,[0 1 0 ]β [0 1 1 ] Si,但是该平行关系并不精确满足。对 β FeSi2 Si的最佳取向的理论计算结果表明 β FeSi2 和Si要在上述取向关系基础上经过三维小角度旋转调整后才能达到最佳取向 ,此时 β FeSi2 和Si中不存在严格平行的晶面 ,因而在Si基体上生长高质量的 β FeSi2 单晶薄膜存在本质困难 ;计算结果还表明掺杂C离子后β FeSi2 晶格常数的微量调整对最佳取向关系影响不大 ;当 β FeSi2 和Si处于最佳取向时 ,它们之间可能的最佳界面是 (0 0 1 )β (0 2 2 ) Si或 (1 1 0 )β (1 1 1 ) Si。
The orientation relationships (ORs) between semiconducting β FeSi 2 films and Si substrate synthesized by ion implantation has been investigated by using the principle of near coincidence sites. With TEM analysis, the most common OR is (200) β//(200) Si , [010] β//[011] Si with slight angular deviations. The theoretical calculation confirms the necessity of the existence of these slight angular deviations to reach the optimum OR. Meanwhile, theoretical calculation proves that slight adjustment of lattice constants of β FeSi 2 phase after carbon doping has little influence on the optimum OR, and the optimum interface between β FeSi\-2 films and Si substrate might be (001) β//(022) Si or (110) β//(111) Si when they are at optimum OR.
出处
《材料热处理学报》
EI
CAS
CSCD
北大核心
2002年第3期59-64,共6页
Transactions of Materials and Heat Treatment
基金
国家自然科学基金项目 ( 59872 0 0 7)
