摘要
热传导型半导体瞬态问题的数学模型是一类非线性偏微分方程的初边值问题 .电子位势方程是椭圆型的 ,电子、空穴浓度方程及热传导方程是抛物型的 .本文给出求解的配置方法 ,并得到最优H1 模误差估计 .
The mathematical models of the transient behavior of semiconductor with heat-conduction are initial and boundary peoblem of nonlinear partial differential equation system.Electric potential is described by a elliptic equation,while electron concentration,hole concentration and heat-conduction are described by parabolic equations.Collocation methods are given and optimal H 1-error estimates are obtained.
出处
《山东大学学报（理学版）》
CAS
CSCD
北大核心
2002年第4期307-311,共5页
Journal of Shandong University(Natural Science)
基金
国家自然科学基金资助项目 ( 1 9972 0 3 9)
数学天元基金资助项目 (TY1 0 1 2 6 0 2 9)
