摘要
提出一种采用IGBT集电极漏电流对其芯片性能退化进程进行监控的健康状态监测方法。基于IGBT基本结构、半导体物理和器件可靠性物理学,对IGBT电气特征量——集电极漏电流的产生机理、运行规律与性能退化机理进行详细分析,查明了其随性能退化应力水平和施加时间的变化规律。在此基础上,通过将理论分析与解析描述相结合,建立针对IGBT芯片性能退化的集电极漏电流健康状态监测方法。仿真和实验结果验证了该方法的正确性与准确性。该方法对于实现IGBT芯片性能退化进程监控具有一定的理论意义和应用价值。
A health condition monitoring method adopting IGBT collector leakage current is put forward to monitor the performance degradation of IGBT chip.Generation mechanism,operation rule and performance degradation mechanism of collector leakage current were analyzed in detail,based on semiconductor physics,essential structure of IGBT and device reliability physics.The variations of collector leakage current with the performance degradation grade and time were also studied.After that,combined theoretical analysis with analytical description,the health condition monitoring method of collector leakage current against the performance degradation of IGBT chip was established.The results of simulations and experiments verify the proposed method.It is important in theory and practical application for performance degradation monitoring of IGBT chip.
作者
刘宾礼
肖飞
罗毅飞
汪波
熊又星
Liu Binli;Xiao Fei;Luo Yifei;Wang Bo;Xiong Youxing(National Key Laboratory of Science and Technology on Vessel Integrated Power System Naval University of Engineering Wuhan 430033 China)
出处
《电工技术学报》
EI
CSCD
北大核心
2017年第16期183-193,共11页
Transactions of China Electrotechnical Society
基金
国家自然科学基金青年项目(51507185)
国家自然科学基金重点项目(51490681)
国家重点基础研究发展计划(973计划)(2015CB251004)资助
关键词
IGBT芯片性能退化
阈值电压
集电极漏电流
健康状态监测方法
Performance degradation of IGBT chip
threshold voltage
collector leakage current
health condition monitoring method
