摘要
超结结构突破了传统功率MOS器件的理论极限,被誉为功率MOS器件的里程碑器件。本文对超结领域全球的相关专利技术进行分析,从申请趋势、区域分布、主要申请人等多个角度进行深入挖掘,梳理超结技术的现状及发展趋势。
Superjunction break through the theoretic limit of the traditional power MOSFET as a new milestone.This article analyzes the patent applications related to superjunction,and researches from different aspects,such as the trend in patent technique development,patent area distribution and applicants distribution,thus to understand the current situation and development direction of superjunction.
作者
王琳
周天微
Wang Lin;Zhou Tianwei(Patent Examination Cooperation Tianjin Center of The Patent Office,SIPO,Tianjin,300304,China)
出处
《河南科技》
2017年第16期49-51,共3页
Henan Science and Technology
关键词
超结
专利分析
技术生命周期
superjunction
patent analysis
technology life cycle
