摘要
大功率IGBT器件通过并联多个IGBT芯片来获得大电流等级,并联芯片动静态电流分布的一致性对于提高器件电流等级以及可靠性至关重要。首先介绍了大功率IGBT模块内部布局不一致导致的封装寄生参数差异性。其次,结合IGBT等效电路模型及其开关特性,分析了寄生参数差异性对于并联IGBT芯片瞬态电流分布特性的影响规律。最后,建立了并联IGBT芯片的等效电路模型,并应用SynopsysSaber软件建立了仿真电路,从封装寄生电感参数差异性、封装寄生电阻参数差异性,分析了参数差异对并联芯片的瞬态电流分布特性的影响。
High power IGBT usually use multiple chips in parallel to achieve large current. The consistency of the dynamic and static current distribution of parallel chips is essential to improve the current level and reliability of devices.At first, the difference of package parasitic parameters caused by inconsistent internal layout of paralleled IGBT chips is introduced in this paper. Secondly, combined with the equivalent circuit model of IGBT and its switching characteristics, the influence of parasitic parameters on the transient current distribution characteristics of parallel IGBT chips is analyzed. Then, the equivalent circuit model of parallel IGBT chip is established, and the simulation circuit is built by Synopsys Saber software. From the differences of package parasitic inductance parameters and package parasitic resistance parameters, the influence of parameters differences on the transient current distribution characteristics of parallel chip is analyzed. In this paper, the influence of various package parasitic parameters on the transient current distribution is considered comprehensively, which is of great significance for optimizing the transient current consistency of multi-chip parallel connection.
作者
石浩
吴鹏飞
唐新灵
董建军
韩荣刚
张朋
SHI Hao;WU Pengfei;TANG Xinling;DONG Jianjun;HAN Ronggang;ZHANG Peng(Global Energy Interconnection Research Institute Co. Ltd., Beijing 102209, China;State Grid Jincheng Electric Power Supply Company, Jincheng 033000, China)
出处
《中国电力》
CSCD
北大核心
2019年第8期16-25,共10页
Electric Power
基金
国家科技重大专项集成电路专项资助项目(2015ZX02301)
国家电网公司科技项目(GEIRI-GB-71-17-001)~~
关键词
IGBT
并联芯片
寄生电感
寄生电阻
瞬态电流分布
IGBT
parallel chips
parasitic inductance
parasitic resistance
transient current distribution
