摘要
采用我们自己建立的微机控制光伏谱自动测量系统,测量了 P-Al_(0.35)Ga_(0.65)As/n-GaAs 异质结在不同温度下的光伏谱和 p-GaAs/n-GaAs 同质结、P-Al-GaAs/p-GaAs/n-GaAs 异质面在室温下的光伏谱,并进行比较分析。采用改进的阻尼最小二乘法对实验数据进行拟合计算,求出少子扩散长度、结深、表面复合速度和界面复合速度等重要参数。
Photovoltaic spectra of P-Al_(0.35)Ga_(0.65)As/n-GaAs heterojunction at different temperatures as well as that of p-GaAs/n-GaAs homojunction and P- AlGaAs/p-GaAs/n-GaAs heteroface at room temperature are measured using the computer-controlled system established by ourselves.The comparison and analysis of the experimental results are given.The experimental data are fitted by using the improved damping least square method so that some important parameters,such as minority carrier diffusion lengths,junction depth,surface and interface recombination velocities can be derived.
出处
《半导体光电》
CAS
CSCD
北大核心
1992年第3期255-258,共4页
Semiconductor Optoelectronics
