摘要
基于0.13μm CMOS工艺设计了一个高阶曲率补偿带隙基准电压源,该带隙基准电压源具有低温度系数和高电源抑制比(PSRR)。通过高阶曲率补偿电路得到低温度系数;在该带隙基准电压源的核心电路中,使电流镜管的栅源电压保持恒定值来实现在一定频段下的PSRR增强。利用Cadence工具进行了仿真,并进行了流片验证,测试结果表明,该带隙基准电压源具有恒定的1.2 V基准电压,在-45~165℃内,基准电压的温度系数为3.95×10-6/℃;PSRR在10 kHz下为74.7 dB,在1 MHz下为42 dB;电路启动时间为1.4μs。该设计已应用于高精度嵌入式电源管理芯片的低压差线性稳压器中。
A high-order curvature compensation bandgap reference voltage source was designed based on 0.13μm CMOS process with a low temperature coefficient and high power supply rejection ratio(PSRR).The low temperature coefficient was obtained by a high-order curvature compensation circuit.In the core circuit of the bandgap reference voltage source a constant gate-source voltage in the current mirror was maintained to enhance the PSRR under a certain frequency.The Cadence tool was used for the simulation,and the chip was fabricated and verified.The test results show that the bandgap reference voltage source has a constant reference voltage of 1.2 V and temperature coefficient of the reference voltage is 3.95×10-6/℃in the temperature range of-45-165℃.The circuit performs a PSRR of 74.7 dB@10 kHz and 42 dB@1 MHz,and the start-up time of the circuit is 1.4μs.The design has been used in low dropout regulators in high precision implanted power management chips.
作者
陈昊
张彩珍
王梓淇
王永功
Chen Hao;Zhang Caizhen;Wang Ziqi;Wang Yonggong(School of Electronics and Information Engineering,Lanzhou Jiaotong University,Lanzhou 730070,China;Tianshui Tianguang Semiconductor Co.,Ltd.,Tianshui 741000,China)
出处
《半导体技术》
CAS
北大核心
2019年第12期905-909,共5页
Semiconductor Technology
基金
国家自然科学基金资助项目(61762057)
甘肃省自然科学基金资助项目(1610RJZA046)
关键词
带隙基准电压源
高电源抑制比(PSRR)
低温度系数
曲率补偿
启动时间
bandgap reference voltage source
high power supply rejection ratio(PSRR)
low temperature coefficient
curvature compensation
start-up time
