摘要
集成电路器件处在辐射敏感环境中时,易受到粒子轰击产生单粒子效应,使得电路的逻辑值发生翻转,影响电路的可靠性。为了提高电路的可靠性,需要针对单粒子效应引起的单粒子翻转(single event upset,SEU)问题进行加固研究,三模冗余(triple modular redundancy,TMR)锁存器是最简单有效的抗SEU加固锁存器。文章阐述了TMR相关基础知识,包括结构组成、可靠性分析和工作原理。TMR锁存器分为主级和从级。主级是由3个相同模块组成的,从级是“三中取二”表决器。文中使用的表决器为2种传统表决器和9种晶体管级表决器。传统表决器是由门级单元构成,晶体管级表决器是由PMOS管和NMOS管组合构成。文章分析比较了11种不同结构的TMR锁存器,利用Hspice仿真工具测得TMR锁存器的功耗、延迟、面积开销,并进行综合性能比较。
When the integrated circuit device is in a radiation-sensitive environment,it is susceptible to particle bombardment to generate a single event effect(SEE),which causes the logic value of the circuit to reverse,affecting the reliability of the circuit.In order to improve the reliability of the circuit,the single event upset(SEU)problem caused by the SEE needs to be studied for reinforcement.The triple modular redundancy(TMR)latch is the simplest and most effective anti-SEU hardened latch.This paper describes the basic knowledge of TMR,including structure composition,reliability analysis and working principles.The TMR latches are divided into master and slave stages.The master level is composed of three identical modules,and the slave level is composed of voters.The arbitrators listed in the paper are two conventional voters and nine transistor-level voters.The traditional voter is composed of gate-level units.The transistor-level voter is composed of a combination of PMOS tube and NMOS tube.Based on this,the paper comprehensively analyzes and compares 11 different types of TMR latches.The Hspice simulation tool is used to measure the power consumption,delay and area overhead of each TMR latch and compare the overall performance.
作者
黄正峰
王敏
李雪筠
鲁迎春
倪天明
HUANG Zhengfeng;WANG Min;LI Xueyun;LU Yingchun;NI Tianming(School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230601, China;School of Electrical Engineering, Anhui Polytechnic University, Wuhu 241000, China)
出处
《合肥工业大学学报（自然科学版）》
CAS
北大核心
2020年第3期364-369,共6页
Journal of Hefei University of Technology：Natural Science
基金
国家自然科学基金资助项目(61874156,61574052)
安徽省自然科学基金资助项目(1608085MF149)
安徽工程大学科研启动基金资助项目(2018YQQ007)。
关键词
三模冗余(TMR)
表决器
容错
晶体管级
triple modular redundancy(TMR)
voter
fault-tolerant
transistor level
