摘要
碳化硅(silicon carbide,SiC)金属氧化物半导体场效应晶体管(metal-oxide-semiconductorfield-effecttransistor,MOSFET)比Si MOSFET具有更低的导通电阻、更高的通流能力和热稳定性。但射频硅(radio frequency silicon,RF-Si)基MOSFET凭借其优异的开关动态特性,在高压纳秒脉冲发生器中的使用比SiCMOSFET更为普及。为了拓展SiC MOSFET的应用范围,通过RF-Si和SiCMOSFET在多脉冲参数条件下瞬态开关特性(动态特性、瞬态开关损耗、时间抖动)的对比研究,该文揭示2种半导体器件在瞬态高压和强流下的开关特性差异。实验结果表明:相对于RF-Si基MOSFET,SiC MOSFET的优势体现在开通、关断时间。但由于寄生参数的影响,SiC MOSFET呈现出更大的振荡和过冲,而在瞬态开关损耗、时间抖动方面没有明显的优势。因此,通过改进SiCMOSFET的封装从而减小寄生参数,将推动SiC MOSFET在高压纳秒脉冲发生器中的应用。
Silicon carbide(SiC)metal-oxide-semi-conductor field-effect transistor(MOSFET)has lower on-resistance,higher flow-through capability and thermal stability than Si MOSFET.However,radio frequency silicon(RF-Si)MOSFET is more popular than SiC MOSFET in high voltage nanosecond pulse generator because of its excellent dynamic characteristics.In order to expand the application scope of SiC MOSFET,we compared the transient characteristics(dynamic characteristics this paper,transient turn on-off loss,time jitter)of RF-Si and SiC MOSFET under multi-pulse parameters,and focused on revealing the difference of switching characteristics between the two semiconductor devices under transient high voltage and strong current.The experimental results show that the advantages of SiC MOSFET are reflected in the turn-on and turn-off time compared with RF-Si MOSFET.However,due to the influence of parasitic parameters,SiC MOSFET exhibits greater oscillation and overshoot,while it has no obvious advantages in terms of transient turn on-off loss and time jitter.Therefore,the improvement of SiC MOSFET package to reduce parasitic parameters will be of great significance for the widespread application of SiC MOSFET in high voltage nanosecond pulse generator.
作者
马剑豪
何映江
余亮
董守龙
姚陈果
MA Jianhao;HE Yingjiang;YU Liang*;DONG Shoulong;YAO Chenguo(State Key Laboratory of Power Transmission Equipment&System Security and New Technology(Chongqing University),Shapingba District,Chongqing 400044,China)
出处
《中国电机工程学报》
EI
CSCD
北大核心
2020年第6期1817-1828,共12页
Proceedings of the CSEE
基金
国家自然科学基金项目(51907011)
中央高校基本科研业务费(2019CDXYDQ0010,019CDJGFDQ001)
重庆市自然基金(cstc2019jcyj-msxm0368)。
关键词
SIC
MOSFET
射频
纳秒短脉冲
脉冲功率源
高电压
silicon carbide(SiC)
metal-oxide-semiconductor field-effect transistor(MOSFET)
radio frequency(RF)
nanosecond short pulse
pulse power generator
high voltage
