摘要
Graphene foam is becoming a material of choice for magnetoelectronic devices due to its large,linear and unsaturated room temperature magnetoresistance.However,the magnetoresistance of graphene foam is not as large as that of monolayer graphene.Herein,we describe how magnetoresistance^100%was detected at room temperature under a magnetic field of 5 T that is comparable to the magnetoresistance in monolayer graphene;the highest magnetoresistance of^158%was detected at 5 K under a magnetic field of 5 T.Unlike monolayer graphene,graphene foam is far more comfortable with producing in gram scale and utilizing in magnetoelectronic devices.
基金
The authors would like to thank the National High Technology Research and Development Plan of China(2015AA043505)
the National Science Foundation of China(21574086)
Shenzhen Sci&Tech(research grant ZDSYS201507141105130)
the Shenzhen City Science,Technology Plan Project(JCYJ20160520171103239)
Equipment Advanced Research Funds(61402100401)
Equipment Advanced Research Key Laboratory Funds(6142804180106)
Shenzhen Fundamental Research Funds(JCYJ20180508151910775)
the National Natural Science Foundation of China(11850410427)for financial support.
