摘要
碲锌镉(CdZnTe)作为一种重要的Ⅱ-Ⅵ族化合物半导体,因其具备优异的光电性能,成为制备室温辐射探测器的理想材料。但生长态的CdZnTe晶体中不可避免地会引入Cd空位、沉淀/夹杂相、杂质和位错等缺陷,严重影响了所制备器件的质量和光电性能。因此,需对生长态晶体进行退火改性处理以提高晶体的质量。本文分析了CdZnTe材料中存在的主要缺陷,重点综述了退火改性工艺如退火温度、退火时间、退火气氛以及退火方式对CdZnTe晶体质量及探测器性能的影响。
Cadmium zinc telluride(CdZnTe)is an important Ⅱ-Ⅵ compound semiconductor.It is an ideal material for room temperature radiation detectors due to its excellent opto-electrical properties.However,defects such as Cd vacancies,precipitate/inclusion phases,impurities and dislocations inevitably exist in asgrowth CdZnTe crystals.These defects seriously influence the quality and opto-electrical performance of the fabricated devices.Therefore,the properties of as-grown crystals need to be improved by annealing.The main defects in CdZnTe were analysed in this paper.The research progress of annealing processes such as annealing temperature,annealing time,annealing atmosphere and annealing method on the crystal quality and detector performance of CdZnTe was particularly reviewed.
作者
陈永仁
赵鹏
俞鹏飞
刘文斐
芦晗越
王蕾
高力
郑丹
CHEN Yongren;ZHAO Peng;YU Pengfei;LIU Wenfei;LU Hanyue;WANG Lei;GAO Li;ZHENG Dan(School of Materials Science and Engineering,Chang'an University,Xi'an 710064,China)
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2021年第2期342-354,共13页
Journal of Materials Science and Engineering
基金
国家自然科学基金资助项目(51602026)
陕西省科技厅资助项目(2018JM5150)。
关键词
室温辐射探测器
碲锌镉
缺陷
退火改性
晶体质量
Room temperature radiation detector
CdZnTe
Defects
Annealing
Crystal quality
