摘要
常规驱动(CGD)对绝缘栅双极型晶体管(IGBT)开关特性的控制优化程度有限。当换流条件改变时,CGD方法也无法保证器件开关特性可以保持在最优状况,即缺乏自调节能力。学术界相应地提出主动栅极驱动(AGD)方法来实现对开关特性的自调节控制。但在实施自调节控制时,会遇到自调节控制稳定性、控制精度等方面的问题。该文在之前工作的基础上开展后续深入研究,针对这些问题,从理论上提出自调节控制时的3个关键设计点,并分别进行了实验验证,为AGD方法实施自调节控制提供了指导。该文综述已有驱动对IGBT关断峰值电压控制的缺陷,提出一种端电压峰值采样电路。将该采样电路与自调节控制结合,通过实验验证了直接控制端电压峰值的准确性,为更安全、更低损耗地关断IGBT打下了坚实基础。
The widely used conventional gate drive(CGD)has limited effects as to the control and optimization of switching characteristics of insulated gate bipolar transistors(IGBTs).Besides,when the switching conditions change,CGD cannot keep the device characteristics in an optimal state,i.e.,it lacks self-regulating ability.Numerous active gate drive(AGD)methods have been developed to realize the self-regulating control.However,problems such as control stability and control accuracy will occur when applying this control.In this paper,to solve these problems,three key design points regarding the self-regulating control are proposed and verified by experiments,which provides a reference for AGD methods to achieve self-regulating control.This paper summarizes the control of IGBT turn-off peak voltage and proposes a novel circuit for precise sensing of IGBT collector-emitter peak voltage.It is shown that by combining the peak sensing circuit and self-regulating control,the peak voltage can be regulated with high accuracy,laying a solid foundation for safe and low-loss turn off for power semiconductors.
作者
凌亚涛
赵争鸣
姬世奇
Ling Yatao;Zhao Zhengming;Ji Shiqi(State Key Laboratory of Control and Simulation of Power Systems and Generation Equipment Department of Electrical Engineering,Tsinghua University,Beijing 100084,China)
出处
《电工技术学报》
EI
CSCD
北大核心
2021年第12期2482-2494,共13页
Transactions of China Electrotechnical Society
基金
国家自然科学基金委员会—中国国家铁路集团有限公司高速铁路基础研究联合基金资助项目(U2034201)。
