摘要
Precipitates in undoped GaN epilayers with specular surfaces grown on sapphire substrates were imaged by super high-resolution electron microscopy(HREM)and analyzed by energy-dispersive x-ray spectrometry(EDXS).The HREM images of the precipitates appeared more or less hexagonal intersection with several ten-nanometer large,which is the same as that of the V-shape defects.The EDXS spectra of the precipitates were mainly composed of the characteristic x-rays of oxygen,carbon,and gallium elements.The results suggest that the precipitates nucleate at the pinholes of the V-shape cavities and grow as the GaN growth.
基金
Supported in part by the National Natural Science Foundation of China under Grant No.69576022
Natural Science Foundation of Fujian Province
the Research Funds of Japan Society for the Future Program on "Atomic Scale Surface and Interface Dynamics".
