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小圆形平面靶倾斜磁控溅射镀膜均匀性研究 被引量:3

Study on Uniformity of Inclined Magnetron Sputtering with Small Circular Plane Target
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摘要 基于小圆形平面靶倾斜磁控溅射的实际情况,针对靶材环形刻蚀槽与水平工件台存在夹角的特点,建立数学模型。利用MATLAB软件进行模拟仿真,研究靶材与工件台正对且高度固定时,不同夹角对膜厚分布的影响。我们发现在工件台相对靶材的水平距离上,膜厚先增加后降低。当靶材夹角适当时,在工件台固定的区域范围内,薄膜沉积速率的变化近似直线。根据薄膜厚度在工件台水平面呈圆弧状递减分布实际特点,模拟出在4英寸的衬底上片内均匀性。根据模拟结果,我们在4英寸的衬底上制备出片内非均匀性小于0.6%的氮化钽薄膜,验证了数学模型的合理性,并解释了非均匀性的实验结果优于模拟计算结果的原因。这为设计制造磁控溅射镀膜设备提供了参考。 Based on the actual situation of the inclined magnetron sputtering with the circular plane target,the mathematical model is established according to the characteristics of the angle between the annular etching groove of the target and the horizontal workpiece table.Matlab software is used to simulate and study the influence of different angle on the film thickness distribution when the target and workpiece table are facing each other and the height is fixed.We found that the film thickness increases first and then decreases in the horizontal distance between the worktable and the target.When the target angle is appropriate,the film deposition rate changesapproximately in a straight line within the fixed area of the worktable.We simulated the uniformity on the 4-inch substrate according to the actual characteristics of thedecreasing distribution of the film thickness in the horizontal plane of the worktable.According to the results of theoretical simulation,tantalum nitride films with nonuniformity less than 0.6%were prepared on a 4-inch substrate,which verified the correctness of the mathematical model.The reason why the experimental results are better thanthat of the simulation is explained.This work provides a reference for the design and manufacture of magnetron sputtering coating equipment.
作者 付学成 徐锦滨 乌李瑛 黄胜利 王英 FU Xue-cheng;XU Jin-bin;WU Li-ying;HUANG Sheng-li;WANG Ying(Advanced Electronics Materials and Devices,Shanghai Jiao Tong University,Shanghai 200240,China)
出处 《真空》 CAS 2021年第4期1-5,共5页 Vacuum
基金 2018年度上海交通大学决策咨询立项课题(JCZXSJB2018-028)。
关键词 圆形平面靶 磁控溅射 倾斜溅射 数学模型 高均匀性 circular plane target magnetron sputtering inclined sputtering mathematical model high uniformity
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