摘要
为了更准确地认识功率器件在非钳位感性负载开关(UIS)测试中的动态雪崩失效过程,基于实际流片工艺,在Sentaurus TCAD软件中,采用元胞和终端并联仿真的方法,完成了两款不同终端耐压的100 V沟槽MOS器件的UIS仿真。通过仿真得到的各类特性参数,详细分析了两款器件的动态雪崩失效过程。结果表明器件在不同终端耐压条件下具有不同的动态雪崩失效机制,更高的终端耐压能够明显改善器件的雪崩性能,为功率MOS器件的可靠性设计和优化提供了理论指导。
To more accurately understand the dynamic avalanche failure process of power devices in the unclamped inductive switching(UIS) test, based on the actual tape-out process, the UIS simulation of two 100 V trench MOS devices with different termination withstand voltages was performed by using the methods of parallel simulation of the cell and the termination in the Sentaurus TCAD software.The dynamic avalanche failure process of the two devices was analyzed in detail based on the simulation data.The results show that the devices have different dynamic avalanche failure mechanism under different termination withstand voltages, and higher termination withstand voltage can significantly improve the device’s performance, which provides theoretical guidance for the reliability design and optimization of power MOS devices.
作者
冉飞
冯全源
RAN Fei;FENG Quanyuan(Institute of Microelectronics,Southwest Jiaotong University,Chengdu611756,China)
出处
《电子元件与材料》
CAS
CSCD
北大核心
2021年第10期1007-1011,共5页
Electronic Components And Materials
基金
国家自然科学基金重大项目(62090012)
国家自然科学基金重点项目(62031016,61831017)
四川省重点项目(2019YFG0498,2020YFG0282,2020YFG0452,2020YFG0028)。
关键词
沟槽MOS
动态雪崩
失效分析
UIS
终端
并联仿真
trench MOS
dynamic avalanche
failure analysis
UIS
termination
parallel simulation
