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多晶硅冷氢化过程模拟研究

Simulation study on cold hydrogenation process of polysilicon
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摘要 随着新能源和信息工业的快速发展,多晶硅生产的重要性日益凸显,我国企业主要采用改良西门子法生产多晶硅,并将四氯化硅(SiCl_(4)/STC)转换为三氯氢硅(SiHCl_(3)/TCS),STC冷氢化过程是其中重要一环,但对其研究还不够,STC冷氢化在氯化亚铜催化剂作用下于400~600℃下进行,较高的反应温度需要考虑热力学平衡,因此,本文主要运用Aspen Plus化工模拟软件对多晶硅生产过程中STC冷氢化过程的热力学和动力学反应过程进行模拟计算,系统分析反应过程,确定STC冷氢化反应4个独立反应和总反应,并对反应热随温度的变化进行分析,再计算H_(2)/STC摩尔比、反应温度、反应压力等条件对产物平衡组成的影响,并给出其适宜条件,最后输入动力学模型参数,对活塞流反应器的换热方式进行研究,结果发现绝热式反应器结构简单、易于控制,更适合STC冷氢化反应过程。 With the rapid development of new energy and information industry,the importance of polysilicon production has become prominent increasingly.Chinese enterprises mainly produce polysilicon by the improved Siemens method,and silicon tetrachloride(SiCl_(4)/STC)is converted into trichlorosilane(SiHCl_(3)/TCS).The STC cold hydrogenation process is an important part,but its research is not enough.STC cold hydrogenation is carried out under the action of cuprous chloride catalyst at 400~600℃,the high reaction temperature requires consideration of thermodynamic equilibrium,therefore,this article mainly used Aspen Plus chemical simulation software simulates and calculates the thermodynamic and kinetic reaction process of the STC cold hydrogenation process in the polysilicon production process.First,the reaction process was systematically analyzed,four independent reactions and the total reaction of the STC cold hydrogenation reaction were determined,the change of the reaction heat with temperature was analyzed,then the H_(2)/STC molar ratio,reaction temperature,reaction pressure and other conditions were used to balance the product.The influence of the composition was given,and the appropriate conditions were given.Finally,the kinetic model parameters were input and the heat exchange mode of the plug flow reactor was studied.It was found that the adiabatic reactor had a simple structure,easy to control and more suitable for the STC cold hydrogenation process.
作者 王绪根 李梦丽 徐壮 郭俊恒 高素芳 WANG Xugen;LI Mengli;XU Zhuang;GUO Junheng;GAO Sufang(School of Chemistry and Chemical Engineering of Shihezi University/Xinjiang Corps Key Laboratory of Chemical Green Process,Shihezi,Xinjiang 832003,China;School of Chemical Engineering,Tianjin University,Tianjin 300072;College of Science,Shihezi University,Shihezi Xinjiang 832003,China)
出处 《石河子大学学报(自然科学版)》 CAS 北大核心 2021年第6期661-667,共7页 Journal of Shihezi University(Natural Science)
基金 兵团重大科技项目(2017AA07,2020AA004)。
关键词 多晶硅 冷氢化 Aspen Plus 热力学平衡 polysilicon cold hydrogenation Aspen Plus thermodynamic equilibrium
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  • 1李国栋,张秀玲,胡仰栋.电子级多晶硅生产工艺的热力学分析[J].过程工程学报,2007,7(3):520-525. 被引量:25
  • 2崔容强,施砀,严世权,等.中国万吨级太阳能硅发展研究[A].中国太阳能光伏进展[C].成都:中国可再生能源学会,2006:31-37.
  • 3Greg P. Smestad, Carl M. Lampert. Solar Power 2006, San Jose, CA [J]. Solar Energy Materials & Solar Cells, 2007, 91 (5): 440-444.
  • 4Jin-feng Huang, Liang-sun Lee. Simultaneous estimation of excess enthalpy, excess Gibbs energy and vapor-liquid equilibrium using the modified Wilson model[J]. Fluid Phase Equilibria, 1996, 121 ( 1-2 ):27-43.
  • 5Gani, R., J. P. O'Connell. A knowledge based system for the selection of thermodynamic models [J]. Computers & Chemical Engineering, 1989, 13(4-5):397-404.
  • 6Zanta, Josef, Laskafeld, et al. Liquid-vapor equilibrium in the trichlorosilane-methyldichlorosilane-silicon tetrachloride system [J]. Chemicky Prumysl, 1969, 19(12):539-544.
  • 7]Carl L. Yaws, William Braker. Matheson gas data book [M]. Mc Graw-Hill Professional, 2001:870-874.
  • 8赵兴华,蒲晓东,陈绍章,等.四氯化硅生产三氯氢硅的方法:中国,101445245[P].2009-06-03.
  • 9唐前正,何劲.赵新征.由四氯化硅制取三氯氢硅的方法:中国.101700886[P].2010-05-05.
  • 10梁钟荣.多晶硅价格或将预见[N].21世纪经济报道,2014-03-17(22).

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