摘要
Graphene has raised a huge wave in 2D materials field,breeding lots of graphene analogs with applications in optical and electrical devices,energy conversion and storage,bio-logy,etc.[1,2].Graphene presents superior carrier mobility,while its zero-bandgap restricts its transistor application.To make up this shortcoming,new 2D materials with certain bandgaps and high carrier mobility are being developed.Two typical materials are transition metal dichalcogenides(TMDs)and black phosphorus,which exhibit layered structure,layer-dependent band structure and strong quantum con-straints[3−5].As a congener of phosphorus,arsenic can complement the bandgap of existed 2D materials[6−18].
基金
the National Key Research and Development Program of China(2017YFA0208200)
the Fundamental Research Funds for the Central Universities of China(0205-14380266)
the National Natural Science Foundation of China(22022505 and 21872069)
the Natural Science Foundation of Jiangsu Province(BK20180008)
the Shenzhen Fundamental Research Program of Science,Technology and Innovation(JCYJ20180307155007589)
the National Key Research and Development Program of China(2017YFA0206600)
the National Natural Science Foundation of China(51773045,21772030,51922032,21961160720)for financial support.
