摘要
电子器件的微型化对钎焊界面的可靠性提出更高的要求,深入研究钎焊界面金属间化合物(Intermetallic compound,IMC)的形貌演变和生长机制具有重要意义。金属Cu具有优良的导电导热性能,在微电子封装行业中广泛应用为基体材料。在钎焊回流过程中,Cu基体与Sn钎料发生界面反应生成IMC,由于IMC具有较高脆性,过度生长的IMC会严重降低焊接接头的可靠性。为了抑制IMC的过度生长,在Cu基体表面分别制备Cu_(5)Zn_(8)扩散阻挡层和Sn/Ag_(3)Sn/Ag扩散阻挡层。研究在不同钎焊工艺下,纯Sn钎料在Cu基板、Cu_(5)Zn_(8)扩散阻挡层/Cu基板、Sn/Ag_(3)Sn/Ag扩散阻挡层/Cu基板上IMC的形貌演变及生长动力学机制,最终试验结果发现Cu_(5)Zn_(8),Sn/Ag_(3)Sn/Ag扩散阻挡层可以抑制Sn/Cu钎焊互连界面反应。
The miniaturization of electronic devices is seriously strict with the reliability of soldering interfaces.Therefore,it is of great significance to study the morphology evolution and growth mechanism of intermetallic compounds(IMC)at the soldering interface.Cu has excellent electrical and thermal conductivity that used as matrix material in the microelectronic packaging industry.During the soldering process,intermetallic compound(IMC)formed by interfacial reaction between Cu and Sn solder.Due to the high brittleness of IMC,the excessive growth of IMC will seriously reduce the reliability of welded joints.To overcome the excessive growth of IMC,Cu_(5)Zn_(8) diffusion barrier layer and Sn/Ag_(3)Sn/Ag diffusion barrier laye are prepared on Cu substrate.The morphology evolution and growth mechanism of IMC on Cu,Cu_(5)Zn_(8) diffusion barrier layer/Cu and Sn/Ag_(3)Sn/Ag diffusion barrier layer/Cu under different soldering process are studied.The results show that Cu_(5)Zn_(8) diffusion barrier layer,Sn/Ag_(3)Sn/Ag diffusion barrier layer can inhibit interface reaction of Sn/Cu soldering.
作者
姚金冶
陈祥序
李花
马海涛
王云鹏
马浩然
YAO Jinye;CHEN Xiangxu;LI Hua;MA Haitao;WANG Yunpeng;MA Haoran(School of Materials Science and Engineering,Dalian University of Technology,Dalian 116024;Department of Aerospace Science and Technology,University of Aerospace Engineering,Beijing 101416;School of Microelectronics,Dalian University of Technology,Dalian 116024)
出处
《机械工程学报》
EI
CAS
CSCD
北大核心
2022年第2期43-49,共7页
Journal of Mechanical Engineering
基金
国家自然科学基金资助项目(51871040)。
