摘要
采用高温固相法制备一系列新型Sr_(3-x)Ga_(2)Ge_(4)O_(14)∶xSm^(3+)(x=0~0.20)及Sr_(2.88)Ga_(2)Ge_(4)O_(14)∶0.06Sm^(3+),0.06M(M=Li^(+),Na^(+),K^(+))荧光粉,通过物相形貌、荧光光谱、热稳定性及CIE色度坐标等分析手段对样品性能进行了详细研究。根据不同掺杂浓度Sr_(3-x)Ga_(2)Ge_(4)O_(14)∶xSm^(3+)的荧光发射谱,发现Sm^(3+)最佳掺杂浓度为x=0.06,其荧光浓度猝灭归因于Sm^(3+)之间的电偶极-电偶极相互作用。研究发现,通过共掺杂M(M=Li^(+),Na^(+),K^(+))做电荷补偿离子可以提升Sr_(3-x)Ga_(2)Ge_(4)O_(14)∶xSm^(3+)的发光性能。此外,随着Sm^(3+)掺杂浓度提高,其荧光寿命不断减小。最后探讨了Sr_(3-x)Ga_(2)Ge_(4)O_(14)∶xSm^(3+)的CIE色度坐标和热稳定性,其CIE色度坐标位于橙红光区域,且在423 K的发光强度大概为其室温的95%。研究表明,Sr_(3-x)Ga_(2)Ge_(4)O_(14)∶xSm^(3+)作为新型橙红荧光粉有望应用于白光发光二极管(WLED)。
A series of Sr_(3-x)Ga_(2)Ge_(4)O_(14)∶xSm^(3+)(x=0-0.20)and Sr_(2.88)Ga_(2)Ge_(4)O_(14)∶0.06Sm^(3+),0.06M(M=Li^(+),Na^(+),K^(+))phosphors were prepared via the high temperature solid-state reaction.The phase structure,crystal morphology,fluorescent spectra,temperature-dependent spectra,and CIE chro⁃maticity coordinates of the samples were investigated.The optimal doping concentration in Sr_(3-x)Ga_(2)Ge_(4)O_(14)∶xSm^(3+)was x=0.06,and the concentration quenching could be ascribed to the dipole-dipole interaction between Sm^(3+)ions.The luminescent emission intensities of Sr_(3-x)Ga_(2)Ge_(4)O_(14)∶xSm^(3+)were greatly enhanced by co-doped M(M=Li^(+),Na^(+),K^(+))ions as charge compensator.The fluorescent decay lifetime became shorter when increasing Sm^(3+)concentration.The CIE chromaticity coordi⁃nates and thermal stability properties of Sr_(3-x)Ga_(2)Ge_(4)O_(14)∶xSm^(3+)were discussed.The CIE chromaticity coordinates of Sr_(3-x)Ga_(2)Ge_(4)O_(14)∶xSm^(3+)were located within the orange-red spectral region and the lumi⁃nescent emission intensities could remain 95%of that at room temperature.All these results indicat⁃ed that Sr_(3-x)Ga_(2)Ge_(4)O_(14)∶xSm^(3+)could be a potential candidate as a novel orange-red emitting component applied in white light emitting diode(WLED).
作者
杨伟斌
熊飞兵
杨寅
周琼
谢岚驰
凌爽
罗新
YANG Wei-bin;XIONG Fei-bing;YANG Yin;ZHOU Qiong;XIE Lan-chi;LING Shuang;LUO Xin(School of Optoelectronics and Communication Engineering,Xiamen University of Technology,Xiamen 361024,China;Fujian Key Laboratory of Optoelectronic Technology and Devices,Xiamen University of Technology,Xiamen 361024,China)
出处
《发光学报》
EI
CAS
CSCD
北大核心
2022年第6期879-890,共12页
Chinese Journal of Luminescence
基金
福建省自然科学基金(2020J01297)资助项目。
