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关于半导体厂房Truss层压力的探讨 被引量:1

Discussion on Pressure of Truss Layer in Semiconductor Plant
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摘要 以我国某新建的半导体芯片厂洁净室Truss层压力测试结果为例,利用在线监测和手持式仪表现场测试相结合的方法,来分析Truss层压力的变化的情况。测试发现核心生产区在符合设计规范的压力情况下[1],百级生产区相对应的Truss层为负压,而且负压值在30Pa左右;其他核心生产区域对应的Truss层也为微负压,负压值为10Pa左右,无法满足Truss层为微正压的技术要求。调试测试中发现,压力损失主要集中在局部阻力和沿程阻力,局部阻力主要是高架地板和DCC的压损;沿程阻力主要是下技术夹层至DCC之间以及过DCC后回风夹道至Truss层之间的压损。 The test takes the pressure test results of TURSS layer in clean room of a new semiconductor chip factory in China as an example,the pressure change of Truss layer is analyzed by combining online monitoring with field test of hand-held instrument.The test found that under the pressure of the core production area in accordance with the design specification,the Truss layer corresponding to the 100-level production area was negative pressure,and the negative pressure value was about 30Pa;Truss layer corresponding to other core production areas is also micro negative pressure,with the negative pressure value of about 10Pa,which could not meet the technical requirements that the Truss layer was micro-positive pressure.It was discovered in the debugging test that the pressure loss was mainly in the local resistance and resistance along the path,and the local resistance was mainly the pressure loss of elevated floor and DCC.The resistance along the path was mainly the pressure loss between the lower technical interlayer and DCC and between the return air passage and Truss layer after DCC.
作者 付章杰 赵卓洲 王健 周华 张耀牛 Fu Zhangjie;Zhao Zhuozhou;Wang Jian;Zhou Hua;Zhang Yaoniu
出处 《洁净与空调技术》 2023年第1期1-4,共4页 Contamination Control & Air-Conditioning Technology
关键词 洁净室 Truss层 核心生厂区 压力 Clean room Truss layer Core production area Pressure
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