摘要
针对传统多物理场耦合分析采用静态功率损耗导致有限元仿真精度低,且现有键合线失效未考虑Diode芯片及其键合线等问题,提出一种结合矿用逆变器工况条件的IGBT模块键合线失效机理分析方法。首先建立FZ800R33KF2C三维模型,其次通过双脉冲仿真与实验验证ANSYS simplorer搭建的特征化IGBT模型动态特性,使用该模型得到在矿用逆变器额定工况下IGBT芯片和Diode芯片瞬时功耗,然后结合矿用逆变器温升实验确定隔爆腔内环境温度参数,最后在ANSYS Workbench下进行热-电-力多物理场耦合仿真,对键合线脱落进行系统性分析。分析表明,在大功率IGBT模块键合线多物理场耦合分析中不能忽略Diode芯片及其键合线。并且在Diode芯片键合线和IGBT芯片键合线共同脱落的情况下,前者脱落对IGBT模块影响更大。
Aiming at the low precision of finite element simulation caused by static power loss in traditional multiphysics coupling analysis,and the failure of existing bonding wire without considering Diode chip and its bonding wire,a failure mechanism analysis method of IGBT module bonding wire combined with working conditions of mine inverter is proposed.Firstly,the three-dimensional model of FZ800R33KF2C is established.Secondly,the dynamic characteristics of the characteristic IGBT model built by ANSYS simplorer are verified by double pulse simulation and experiment.The instantaneous power consumption of IGBT chip and Diode chip under the rated working condition of mine inverter is obtained by using this model.Then,the ambient temperature parameters in the flameproof cavity are determined by combining the temperature rise experiment of mine inverter.Finally,the thermal-electric-mechanical multi-physical field coupling simulation is carried out under ANSYS Workbench,and the bonding wire shedding is systematically analyzed.The analysis shows that the Diode chip and its bonding wires cannot be ignored in the multiphysics coupling analysis of high power IGBT module.In the case of Diode chip bonding wire and IGBT chip bonding wire falling off together,the former falling off has a greater impact on the ICBT module.
作者
李红岩
杨朝旭
荣相
刘宝
LI Hong-yan;YANG Chao-xu;RONG Xiang;LIU Bao(Xi'an University of Science and Technology,Xi'an 710054,China;不详)
出处
《电力电子技术》
北大核心
2023年第4期136-140,共5页
Power Electronics
基金
国家自然科学基金(61703329)
天地(常州)自动化股份有限公司研发项目(2021GY1003)。
关键词
逆变器
功率损耗
多物理场耦合仿真
键合线
inverter
power loss
multi-physical coupling field simulation
bonding wire
