摘要
利用简易溶剂热—球磨法制备了n型半导体Bi_(7)O_(9)I_(3),并对其组分、光学性质、电化学性质进行了分析表征。结果表明:球磨使粉末材料的颗粒尺寸减小、带隙略微变宽,产生的光生电子和空穴更容易迁移和分离,这都有助于增强体系的光催化氮氧化物(NO_(x))的去除能力。在可见光照射下,溶剂热—球磨法制备的Bi_(7)O_(9)I_(3)可去除体积分数40%的NO,明显高于溶剂热法制备的Bi_(7)O_(9)I_(3)的活性。物种捕捉试验表明,光催化过程中起主要作用的是超氧自由基和空穴,据此初步推测了Bi_(7)O_(9)I_(3)的光催化机制。重复试验表明,溶剂热—球磨法制备的催化剂具有良好的重复利用性和结构稳定性。
The n-type oxygen-rich semiconductor Bi_(7)O_(9)I_(3)was readily prepared through a solvothermalball milling route and subjected to composition,optical,and electrochemical analyses.It was realized that the ball-milling treatment promoted the shrinkage of particle size,slight increase of band gap,and efficient migration and separation of charge carriers,which was beneficial to the enhancement of photocatalytic performance.Under visible light,the ball-milled Bi_(7)O_(9)I_(3)showed strong NO removal efficiency around 40%that was obviously better than the pristine catalog.During processes,superoxide radicals and holes were deemed as major reactive species,by which a preliminary photocatalysis mechanism was deduced.In addition,the sufficient structural stability and reusability of this sample were proven by successive experiments.
作者
刘登国
LIU Dengguo(Shanghai Environmental Monitoring Center,Shanghai 200235,China)
出处
《有色金属材料与工程》
CAS
2023年第3期67-72,共6页
Nonferrous Metal Materials and Engineering
基金
上海市科委基金资助项目(20dz1204000)。
