摘要
Based on the 90 nm silicon photonics commercial foundry,sidewall-doped germanium-silicon photodetectors(PDs)are designed and fabricated.The large designed overlap between the optical field and electric field achieves high responsivity while retaining high-speed performance.Even including the loss due to optical fiber coupling,the PD demonstrates an external responsivity greater than 0.55 A/W for transverse magnetic(TM)polarization and 0.65 A/W for transverse electric(TE)polarization at 1530 nm.A flat responsivity spectrum of>0.5 A/W is achieved up to 1580 nm for both polarizations.Their internal responsivities can exceed 1 A/W in the C+L optical communication bands.Furthermore,with the aid of a 200 mm wafer-level test and analysis,the overall PDs of 26 reticles have a 3 dB optoelectrical bandwidth>50 GHz and a dark current<10 nA at a-3 V bias voltage.Finally,the eye diagram performances under TE and TM polarizations,various modulation formats,and different input wavelengths are comprehensively investigated.The clear open electrical eye diagrams up to 120,130,140,and 150 Gbit/s nonreturn-to-zero are experimentally attained at a photocurrent of 1 m A.To the best of our knowledge,this is the first time that single-lane direct detection of record-high-speed 200,224,256,and290 Gbit/s four-level pulse amplitude modulation(PAM)and 300,336,384,and 408 Gbit/s eight-level PAM optical signals has been experimentally achieved.
基金
National Natural Science Foundation of China(62205255,U21A20454)
Young Top-notch Talent Cultivation Program of Hubei Province。
