摘要
创新地开展p型栅GaN器件的单粒子辐照与建模研究,提取的单粒子激励电流被加载用于全GaN的低压差线性稳压器(LDO)稳压电路的单粒子设计中,获得了该电路单粒子敏感节点,最终得到该节点在重载状态与轻载状态时对应的单粒子瞬态(SET)响应分别为500 mV/60 ns,1210 mV/60 ns。上述研究建立起GaN器件-全GaN基电路的T-CAD/SPICE单粒子效应协同设计方法。
Single event irradiation and modeling of p-gate GaN devices are innovatively carried out.The extracted single event excitation current is used into the single event design of a full GaN low dropout regulator(LDO)voltage stabilizing circuit,and a single event sensitive node of the circuit is obtained.The single event transient(SET)responses of the node corresponding to the heavy load state and the light load state are 500 mV/60 ns and 1210 mV/60 ns respectively.The above study establishes a T-CAD/SPICE single event effect collaborative design method for GaN devices and all GaN based circuits.
作者
朱峻岩
张优
王鹏
黄伟
张卫
邱一武
周昕杰
ZHU Junyan;ZHANG You;WANG Peng;HUANG Wei;ZHANG Wei;QIU Yiwu;ZHOU Xinjie(School of Microelectronics,Fudan University,Shanghai 200433,China;China Key System&Integrated Circuit Co.,Ltd.,Wuxi 214072,China)
出处
《电子与封装》
2024年第1期61-67,共7页
Electronics & Packaging
基金
国家自然科学基金(6202780115)。
