摘要
为研究工艺参数对碲镉汞红外器件单层钝化膜工艺影响规律,采用红外器件钝化膜专用磁控溅射系统设备作为实验载体,通过仿真优化指导设计磁控溅射阴极靶,加快实现磁控溅射靶的制备;并采用仿真与实验相结合的方法研究靶基距、靶偏置角度等工艺参数对镀膜均匀性的影响规律,获得较优的一组工艺参数值,为钝化膜工艺形成稳定、均匀性较好的膜层提供理论指导,为进一步研究双层钝化膜层奠定基础。
To study the influence of process parameters on the single-layer passivation film process of mercury cadmium tellruide infrared devices,this paper uses a specialized magnetron sputtering system equipment for passivation film of infrared devices as the experimental carrier,and guides the design of magnetron sputtering cathode targets through simulation optimization to accelerate the preparation of magnetron sputtering target,simulation and experimental methods are combined to study the influence of process parameters such as target base distance and target bias angle on coating uniformity,and obtain an optimal set of process parameter values,in order to form a stable and uniform film layer for the passivation film process,to lay the foundation for further research on double-layer passivation film layers.
作者
刘杰
黄也
袁祖浩
佘鹏程
石任凭
何秋福
LIU Jie;HUANG Ye;YUAN Zuhao;SHE Pengcheng;SHI Renping;HE Qiufu(The 48^(th) Research Institute Of CETC,Changsha,421500,China)
出处
《电子工业专用设备》
2024年第2期33-38,共6页
Equipment for Electronic Products Manufacturing
关键词
碲镉汞
红外器件
钝化膜
磁控溅射
工艺参数
均匀性
HgxCd1-xTe
Infrared device
Passivation film
Magnetron sputtering
Process parameters
Uniformity
