摘要
碳化硅SiC(silicon carbide)器件被认为是一种良好的耐高温半导体器件,高功率密度和高温应用需要更深入地研究损耗和散热问题。研究了SiC MOSFET功率模块在高温下的最大电流导通能力,考虑了电气性能和散热的相互关系。在建立SiC MOSFET器件的热电耦合模型配合系统散热模型的基础上,分析了热失控过程的机理。通过热电联合仿真确定了一款SiC功率模块高温下的电流容量,与实验结果相比误差约为4%,验证了所提方法的有效性。
The silicon carbide(SiC)device is considered as a semiconductor device with high temperature resistance,and a careful study on its loss and heat dissipation is required when it is applied to high-power-density and high-tem-perature scenarios.The maximum current conduction capability of SiC MOSFET power module at high temperature is stud-ied,and the relationship between electrical performance and heat dissipation is taken into account.Based on an electro-thermal coupling model of SiC MOSFET device and a heat dissipation model of the cooling system,the mechanism of thermal runaway process is analyzed.A co-simulation is conducted to determine the current conduction capability of one SiC power module at high temperature,and the simulation error with respect to the experimental result is about 4%,which verifies the effectiveness of the proposed method.
作者
李华康
宁圃奇
康玉慧
曹瀚
郑丹
LI Huakang;NING Puqi;KANG Yuhui;CAO Han;ZHENG Dan(Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《电源学报》
CSCD
北大核心
2024年第2期386-395,共10页
Journal of Power Supply
基金
中国科学院青年创新促进会资助项目(2022135)。
关键词
冷却
结温
封装
功率模块
碳化硅
热失控
Cooling
junction temperature
packaging
power module
silicon carbide(SiC)
thermal runaway
