摘要
基于光刻胶修正技术,采用两步刻蚀法对石英锥形侧壁的刻蚀工艺进行了研究。首先利用Ar,O_(2),CF_(4)气体对光刻胶刻蚀,将光刻胶的垂直侧壁修改为锥形侧壁。然后以此为掩膜实现光刻胶倾斜侧壁向石英材料的转移。两步刻蚀在同一个刻蚀腔室内完成。详细研究了光刻胶修正工艺中刻蚀气体流量、刻蚀功率、温度以及刻蚀时间等工艺参数对刻蚀速率、选择比以及刻蚀形貌的影响。通过综合优化工艺制备出刻蚀面光滑、倾斜角度为60°的石英刻蚀形貌。该工作为氧化硅以及其他材料的倾斜侧壁刻蚀工作提供了有力的参考。
Quartz tapered sidewall etching using a two-step etching method was studied based on photoresist modification technology.First,the vertical sidewall of the photoresist was modified to a tapered profile using Ar/O_(2)/CF_(4)plasma.Then,the tapered sidewall of the photoresist was transferred to quartz using the same etching chamber.The influences of gas flow,etching power,temperature,and etching time on the etching rate,selectivity,and morphology during the photoresist modification process were studied in detail.A tapered quartz profile with a sidewall angle of 60°and a smooth surface was prepared by optimizing the process parameters.This work provides a helpful guideline for the tapered sidewall etching of SiO_(2),as well as other materials.
作者
刘丹
乌李瑛
沈贇靓
张文昊
刘民
权雪玲
程秀兰
LIU Dan;WU Liying;SHEN Yunliang;ZHANG Wenhao;LIU Min;QUAN Xueling;CHENG Xiulan(Center for Advanced Electronic Materials and Devices,School of Electronic Information and Electrical Engineering,Shanghai Jiaotong University,Shanghai 200240,CHN)
出处
《半导体光电》
CAS
北大核心
2024年第4期606-611,共6页
Semiconductor Optoelectronics
基金
国家科技部“十四五”重点研发计划“高性能免疫现场检测系统研发”项目(2023YFC2413001)。
关键词
石英
光刻胶修正
反应离子刻蚀
倾斜侧壁
quartz
photoresist modification
reactive ion etching
tapered sidewall
