摘要
As one of the important components of high-effi-ciency perovskite/silicon series devices,wide-bandgap(WBG)perovskite solar cells(PSCs)have been suffering from serious carrier transport barriers and huge open-circuit voltage deficit de-rived from non-radiative recombination,especial-ly at the buried interface that are often overlooked.Herein,we combined cationic and anion passiva-tion strategies via ammonium tetra-n-butyl tetrafluoroborate(TBABF_(4))pre-treating the buried interface.Theoretical calculation predicts that the tetrabutylammonium(TBA^(+))organic cations and(tetrafluoroborate)BF_(4)^(−)anions can easily interact with charged interfacial defect.Characterizations further confirm the enhance-ment of carrier transport performance and decrease in defect density upon TBABF4 pre-treat-ment.Consequently,a power conversion efficiency of 21.35%with an ultrahigh filling factor of 84.12%is obtained for 1.68 eV-WBG inverted PSCs.In addition,the device with TBABF4 pre-treatment demonstrates excellent shelf,thermal,and operational stability.
作为高效钙钛矿/硅系列器件的重要组成部分之一,宽带隙钙钛矿太阳能电池存在严重的载流子输运障碍和非辐射复合引起的巨大开路电压亏缺,特别是埋地界面处的电压亏缺常被忽视.本文通过四氟硼酸四正丁基铵预处理埋藏界面,结合了阳离子和阴离子钝化策略.理论计算表明,四丁基铵有机阳离子和四氟硼酸盐BF4-阴离子容易与带电界面缺陷发生相互作用.表征进一步证实了四氟硼酸四正丁基铵预处理后载流子输运性能的增强和缺陷密度的降低.因此,对于1.68 eV宽带隙倒置型宽带隙钙钛矿太阳能电池,获得了21.35%的功率转换效率和84.12%的超高填充系数.此外,经四氟硼酸四正丁基铵预处理的器件表现出优异的存储稳定性、热稳定性和操作稳定性.
基金
the support from Huacai Solar Co.Ltd。
