摘要
Fourier红外透射 (FTIR)谱技术是研究氢化非晶硅 (a Si∶H)薄膜中氢的含量 (CH)及硅—氢键合模式 (Si Hn)最有效的手段 .对用等离子体化学气相沉积 (PCVD)方法在不同的衬底温度 (Ts)下制备出的氢化非晶硅薄膜 ,通过红外透射光谱的基线拟合、高斯拟合分析 ,得到了薄膜中的氢含量 ,硅氢键合模式及其组分 ,并分析了这些参量随衬底温度变化的规律 .
The Fourier transform infrared ( FTIR) spectrum is an effective technology for studying the hydrogen content ( C-H) and the silicon-hydrogen bonding configuration (Si-H-n) of hydrogenated amorphous silicon (a-Si:H) films. In this paper, C-H and Si-H-n of a-Si:H films, fabricated at different substrate temperatures (T-s) by plasma enhanced chemical vapor deposition method, have been obtained by analyzing their FTIR spectra that are treated by baseline fitting and Gaussian function fitting. The effects of T-s on C-H and Si-H-n are studied.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2003年第1期169-174,共6页
Acta Physica Sinica
基金
国家重点基础研究发展规划项目 (批准号 :G2 0 0 0 0 2 82 0 0 )资助的课题~~
关键词
氢化非晶硅薄膜
红外吸收谱
氢含量
硅-氢键合模式
hydrogenated amorphous silicon film
FTIR spectral
hydrogen content
silicon-hydrogen bonding configuration
