摘要
利用固体可饱和吸收体砷化镓 (GaAs)作为被动调Q元件 ,实现了激光二极管抽运平凹腔掺钕钒酸钇(Nd∶YVO4)激光调Q运转 ,详细测量了砷化镓被动调QNd∶YVO4激光输出特性 ,获得脉宽 15ns,重复频率 4 70kHz,光束质量M2 =1.31的激光输出 ,调Q激光运转阈值为 5 0 0mW ,并数值求解了砷化镓被动调Q速率方程 ,讨论了被动调Q机理以及调Q脉冲宽度和脉冲重复频率对抽运速率的依赖关系 ,理论计算结果与实验结果相一致。
Passive\} \%Q \|\%switching of LD\|pumped Nd∶YVO 4 laser was demonstrated with a GaAs wafer as saturable absorbers in a plane\|concave cavity. The pulse characteristics of passive \%Q \%\|switched Nd∶YVO 4 laser with a GaAs were measured. \%Q \%\|switched pulse duration is 15 ns, pulse repetition rate is 470 kHz, beam quality M\+2 is equal to \{1.31\} and laser threshold of passive \%Q \%\|switching is 500 mW. The numerical calculations of rate equations for case of GaAs playing the role as mentioned above are performed, and passive \%Q \%\|switched mechanism and the dependency of pulse duration and pulse repetition rate on pumping rate are discussed. The calculated result was well in agreement with the experiments results.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2003年第3期326-329,共4页
Acta Optica Sinica
关键词
激光器
被动调Q
可饱和吸收体
砷化镓
lasers
passively \%Q \%\|switched
saturable absorbers
GaAs
