摘要
采用高频 C-V特性测试技术 ,研究由热氧化生成的超薄 Si O2 膜和低压化学汽相淀积法制备的非均匀结构 Si3N4膜 ,两者组成的栅介质膜的陷阱特性 (包括陷阱密度、能量和空间分布深度等参数 )。结果表明 :在栅复合膜陷阱电荷非稳态释放模型下建立的高频 C-V理论及其分析方法 ,可以很好地表征实验曲线 。
The memory trap characterization, including trap density, trap energy level and trap space profile, is investigated by the measurement of high frequency C-V in our fabricating SiO 2-si 3N 4 dielectric film with the ultra thin oxide film formed by the thermo-oxidation technique and the nitride film of nonuniform structure formed by LPCVD technique. The result indicates that the analytical theory of high frequency C-V based on the nonsteady state model dealing with the release of memory charges in MNOS structure, has satisfactorily described experimental results and the memory trap distribution parameters can be determined from this theory.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2003年第2期236-240,共5页
Research & Progress of SSE
基金
国家自然科学基金资助 (项目编号 :692 760 34 )
