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一种在固体基底上制备高度取向氧化锌纳米棒的新方法 被引量:17

Novel Approach to Preparing Well-oriented ZnO Nanorods on Substrates
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摘要 采用廉价、低温的方法 ,在修饰过ZnO纳米粒子膜的ITO基底上成功制备出具有高长径比、高度取向的ZnO纳米棒阵列 .用扫描电子显微镜 (SEM) ,X射线衍射 (XRD) ,高分辨透射电子显微镜 (HRTEM)以及拉曼光谱对制备出的ZnO纳米棒的结构和形貌进行了表征 .测试结果表明 ,ZnO纳米棒是单晶 ,属于六方晶系 ,与基底垂直 ,具有沿 (0 0 1)晶面择优生长的特征 ,并且ZnO纳米棒基本上无氧空位的存在 .统计结果显示 ,水热反应 2h后 90 %以上的ZnO纳米棒直径为 12 0~ 190nm ,长度为 4μm . Well-aligned single-crystalline wurtzite zinc oxide nanorods with high aspect ratio have been prepared by a low cost and low temperature hydrothermal approach. Scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD) and Raman spectroscopy have been used to characterize the ZnO nanorod arrays. SEM images indicate that ZnO hexagonal nanorods grow perpendicularly to the modified ITO substrates. The results of XRD and HRTEM reveal that ZnO nanorods grow along the [002] crystallographic face direction. Selected area electron diffraction ( SAED) shows that ZnO nanorods are single-crystalline. Raman spectrum indicates that there is a very low concentration of oxygen vacancies in the highly oriented ZnO nanorod. SEM images show that more than 90% ZnO nanorods have diameter of 120 to 190 nm and the typical length is about 4 mum for the growth time of 2 h. In the meantime, the densely dispersed ZnO nanoparticles on substrates are found to be crucial for growing nanoscale ZnO rods oriented normal to the substrates.
出处 《化学学报》 SCIE CAS CSCD 北大核心 2003年第8期1165-1168,共4页 Acta Chimica Sinica
基金 国家自然科学基金 (No.2 0 0 730 0 3)资助项目
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  • 1Wang, E. W. ; Sheehan, P. E. ; Lieber, C. M. Science 1997,207, 1971.
  • 2Holmes, J. D. ; Johnston, K. P. ; Dory, R. C. ; Korgel, B. A.Science 2000, 287, 1471.
  • 3Huang, M.; Mao, S.; Feick, H.; Yan, H.; Wu, Y.; Kind,H.; Weber, E.; Russo, R.; Yang, P. Science 2001, 292,1897.
  • 4Pan, Z. W. ; Dai Z. R. ; Wang, Z. L.Science 2001, 291,1941.
  • 5Hu, J.; Odom, T. W.; Lieber, C. M. Acc. Chem. Res.1999, 32,435.
  • 6Beermann, N. ; Vayssieres, L. ; Lindquist, S.-E. ; Hagfeldt, A..1. Electrochem. Soc. 20110, 147, 2456.
  • 7Huang, M. H.; Wu, Y.; Feick, H.; Tran, N.; Weber,E. ; Yang, P. Adv. Mater. 2001, 13, 113.
  • 8Kong, Y. C. ; Yu, D. P. ; Zhang, B. ; Fang, W. ; Feng,S. O. Appl. Phys. Lett. 2001, 78,407.
  • 9Wu, J.-J. ; Liu, S.-C. Adv. Mater. 2002, 14, 215.
  • 10Vayssieres, L. ; Keis, K. ; Lindquist, S.-E. ; Hagfeldt, A. J.Phys. Chem. B 2001, 105, 3350.

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