摘要
利用从固态相变产生的沉淀相惯习面总结出的Δg平行法则 ,计算了 β FeSi2 半导体薄膜和Si基体之间可能的择优取向关系。根据界面匹配和结构的分析 ,建议最优衬底基面的晶体学位向。预测的界面是一个无理面 ,含有原子尺度台阶 ,晶格间具有良好匹配关系。以该界面位向作为Si衬底的基面有可能导致高质量金属硅化物 β FeSi2
A possible optimum orientation relationship between the β-FeSi-2 film and Si substrate is determined according to the third Δg parallelism rule,and a CCSL model.The predicted interface exhibits a good lattice matching,containing a secondary invariant line lying in an irrational orientation of [2 2.9 2.9] Si.The corresponding interface ( 2.91 1 1) Si,which defines the plane of Si substrate,must contain steps.This interface may contain a set of the secondary edge dislocations with the Burgers vector of [010] β/4 in spacing of 26nm to accommodate the small misfit(1^5%) between [010] β and [0 1 1] Si.Since the overall interfacial misfit is small, a high-quality β-FeSi-2 film will possibly be obtained by growing it on the above stepped Si substrates.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2003年第5期635-639,共5页
Journal of Materials Science and Engineering
基金
国家自然科学基金资助项目 (50 2 71 0 35)
