摘要
用软件SRIM及蒙特卡罗法综合模拟了靶材溅射及溅射原子输运的过程。模拟结果包括溅射原子输运到衬底时的能量、入射角和入射位置。由模拟结果知,溅射原子输运主要受P×d影响(P为真空室气压,d为靶基距),P×d愈大输运到衬底的溅射原子愈少,且能量愈小;溅射原子到达衬底时,能量集中在几电子伏范围内,且在能量很低的区域有分布峰;角度分布主要集中在垂直方向,这与从靶面出射时的分布相似,但垂直方向的分布有所减小;位置分布与从靶面出射时相比,分布范围在径向扩大、趋于均匀化,但主要在靶直径范围内。
Sputtering of target and transportation of sputtered atoms are simulated with software SRIM and Monte Carlo method. The results of simulation include energies, incidence angles and positions of sputtered atoms on arriving substrate. It can be get that transportation of sputtered atoms is affected greatly by P×d (P is gas pressure in vacuum, d is distance between target and substrate), the bigger the value of P×d, the fewer the number of atoms arriving substrate, and the smaller the energies of them; The energies of sputtered atoms on arriving substrate concentrate upon several eV with another distribution peak in very low energy area; Angle distribution concentrates upon the vertical direction, which was as that of atoms sputtered from the target, but was reduced in comparison; Incidence position distribution becomes more uniform and the distribution area extends in radial direction compared with those of atoms when sputtered from target. Incidence position distribution was limited within the range of target radius.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2003年第5期603-606,共4页
Journal of Functional Materials
基金
国防基础研究资助项目(J1500E002)
陕西省自然科学基金资助项目(99C29)
