摘要
利用离子注入法将磁性离子 Mn+注入到采用金属有机化学气相沉积法制备的 Ga N薄膜中 ,获得了稀磁半导体 (Ga,Mn) N.光致发光谱结果显示由于 Mn的注入 ,使 Ga N中常见的黄带发射被大大抑制 .在反射和吸收光谱中 ,观察到锰引入的新吸收带 ,分析表明该带是由电荷转移过程和锰引入能级 (价带顶上 310 m e V处 )的吸收组成的 .透射光谱显示 (Ga,Mn) N的光学带隙发生了红移 ,计算表明该红移量为 30± 5 m e V.震动样品磁强计的测量结果证实了 Mn掺杂的 Ga N样品在室温下具有铁磁性 .
(Ga,Mn ) N films are prepared by Mn + ion implanted into GaN epilayers grown by metal organic chemical vapor deposition (MOCVD).The properties of (Ga,Mn) N films are studied by optical and magnetic measurements.The photoluminescence results show that the yellow luminescence is greatly decreased in heavily Mn-doped GaN films.A new absorption band formed in the reflectance spectra and absorption coefficient spectra indicates the charge transfer and conduction band-Mn acceptor level transition process.Furthermore a 30±5meV redshift is observed in Mn-doped samples.Vibrating sample magnetometer (VSM) results prove that heavily Mn-doped GaN films have the ferromagnetic properties at room temperature.
基金
国家重点基础研究发展规划 (No.G2 0 0 0 0 683 0 5 )
国家高技术研究发展规划 (No.2 0 0 1AA3 11110 )
国家自然科学基金 (批准号 :699760 14
60 13 60 2 0
699870 0 1)
国家杰出青年基金 (No.60 0 2 5 411)资助项目~~
