摘要
设计了一款600V VDMOS功率器件的终端保护环结构,采用场限环与复合场板相结合的方式降低硅表面的电场峰值,且表面电场分布均匀.在159μm终端长度上仿真实现了670V的耐压,表面电场最大值为2.36e5V*cm-1,提高了终端的可靠性;工艺简单,同时没有增加额外的掩膜与步骤.
The termination structure of 600 V VDMOS has been designed ,which consists of the field limit ring and the complex filed plate to reduce the peak of the electric field and make it flat at the silicon surface . By the simulation ,the breakdown-voltage 670 V has been achieved with 159 μm length termination structure ,and the termination′s reliability has been improved owing to 2 .36e5 V *cm -1 of the maximum surface electric-field .The process technology of this device is simple without additional masks and steps .
出处
《微电子学与计算机》
CSCD
北大核心
2014年第6期129-132,共4页
Microelectronics & Computer
基金
国家自然科学基金重大项目(60990320
60990323)
国家自然科学基金面上项目(61271090)
国家高技术研究发展计划("八六三"计划)重大项目(2012AA0123)
四川省科技支撑计划项目(2012GZ0101)
关键词
功率器件
终端
表面电场
耐压
power device
termination structure
surface electric field
breakdown voltage
