摘要
文章主要分析讨论薄层SOI(绝缘层上的硅)器件的击穿特性。采用两种载流子产生、复合作用的器件模型进行二维数值模拟的方法,揭示了薄硅层OSI MOSFET击穿电压降低是由于漏区附近电场强度增强引起的机理。
The breakdown phenomenon in thin-film SOI MOSFETs has been studied. The simulator employed was a two-carrier/two-dimeusional simulator which incorporated a conventional drift-diffusion model and local impact-ionization model. The simulation revealed that the thinning of the SOI film brings about an increase in the drain electric field due to the two-dimensional effect, causing a significant lowering in the drain breakdown voltage.
出处
《微电子学与计算机》
CSCD
北大核心
1992年第6期1-3,共3页
Microelectronics & Computer
