摘要
绝缘栅型双极性晶体管(insulated gate bipolar transistor,IGBT)模块由于线路杂散电感的存在使得在开通和关断的瞬态过程中产生过大的电压尖峰,过压会使IGBT芯片的集电极电流增大从而导致结温上升,且其是导致IGBT模块失效的一个重要因素,通过有限元仿真软件Ansoft Q3D Extractor对键合线结构IGBT模块的杂散参数进行计算并对其封装结构进行优化,设计可有效降低IGBT模块杂散参数的平板封装结构,结果显示平板封装IGBT模块的主回路杂散电感为11.365 n H,电阻为0.409 m?,与键合线结构IGBT模块相比,杂散电感降低55.1%,电阻降低13.2%。
ABSTRACT:Due to the existence of the circuit stray inductance in insulated gate bipolar transistor (IGBT) modules, large voltage spikes caused in the transient process of the turn-on and turn-off can make the collector current of IGBT chips increase and lead to junction temperature rise. Voltage spike is an important factor which can cause IGBT modules failure. The finite element simulation software Ansoft Q3D Extractor is used to calculate the stray parameters of wire bonding IGBT module and optimize its packaging structure. IGBT module with planar packaging structure is designed which can effectively reduce the stray parameters of IGBT module. Results show that stray inductance of the main loop of the planar packaging IGBT module is 11.365 nH, the resistance is 0.409 m ?, and compared with wire bonding structure of IGBT module, stray inductance is reduced by 55.1%, the resistance is reduced by 13.2%.
出处
《智能电网》
2015年第4期328-332,共5页
Smart Grid
基金
国家重大专项(02专项)(2011ZX02603)~~
关键词
IGBT模块
杂散参数
平板封装
有限元仿真
IGBT module
stray parameter
planar packaging
finite element simulation
