摘要
采用光致发光谱、光致发光激发谱以及拉曼光谱对GaN基量子阱材料进行了实验观察和分析 .实验结果表明样品中量子点结构不均匀及InGaN层中In成分分布不均匀 ,且其光致发光谱的波峰是由自由激子辐射复合发光引起的 .
GaN based quantum wells is studied by observing and analyzing photoluminescence spectrum, photoluminescence excited spectrum and Raman spectrum. The experimental results show that the structure of the quantum dots is not homogeneous and In is not well distributed in the InGaN layer, moreover, the peak in PL spectrum is produced by compound luminescence of free exciton. The Raman spectrum of InGaN/GaN quantum wells makes the multi quantum wells structure characteristics more clear.
出处
《物理实验》
北大核心
2004年第5期46-48,共3页
Physics Experimentation
