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Ni_(80)Fe_(20)/Al_2O_3/ Ni_(80)Fe_(20) 隧道结的TMR特性

The TMR characteristic of Ni_(80)Fe_(20)/Al_2O_3/ Ni_(80)Fe_(20) tunnel junctions
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摘要 采用离子束溅射和磁控溅射技术制备了Ni80Fe20 Al2O3 Ni80Fe20磁性隧道结.控制样品上下铁磁层的厚度,研究了不同铁磁层厚度对样品隧道结磁电阻效应的影响.结果表明,磁电阻随着铁磁层的厚度变化而振荡. The samples of the Ni_(80)Fe_(20)/Al_2O_3/ Ni_(80)Fe_(20) magnetic tunnel junction with ferromagnetic layer of various thickness were prepared with the ion beam sputtering and magnetron sputtering technique. The analy-sis of the relationship between TMR and the thickness of ferromagnetic layer is presented. The result shows the vibration of tunnel magnetic resistance with the changes of thickness of ferromagnetic layer.
出处 《福州大学学报(自然科学版)》 CAS CSCD 2004年第3期289-290,379,共3页 Journal of Fuzhou University(Natural Science Edition)
基金 黑龙江省自然科学基金资助项目(F01-21)
关键词 磁控溅射 磁性隧道结 磁电阻 magnetron sputtering magnetic tunnel junction TMR
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