摘要
采用As元素作为内标对分子束外延生长In_xGa_(1-x)As进行定量俄歇分析。实验测定了元素相对灵敏度因子、基体修正因子和离子溅射修正因子,给出一个定量修正公式。检测结果与电子探针、X射线双晶衍射和手册灵敏度因子法等结果进行了比较。
Quantitative Auger analysis of In_xGa_(1-x)As grown by molecular beam epitaxy (MBE)havebeen performed with an internal standard element method. It is shown that matrix correctionfor K_m^(InGa) is about 1.08 and the composition dependence of K_M^(InGa)is weak for the ternary compounds.No preferential sputtering of As was found and sputter correction factor K_s^(InGa) is equalto 0. 75. Finally, the quantitative results obtainted using this method and that by X-ray double-crystal diffraction analysis are compared.
基金
国家自然科学基金
