摘要
通过化学气象沉积(CVD)的方法合成了块状硒化铟(InSe)晶体,后对制得的块状InSe进行了系列表征,并通过机械剥离的方法得到了二维(2D) InSe纳米片。同时构建了场效应晶体管(FET),考察了InSe纳米片的电学性能,并测试了器件对二氧化氮(NO2)的气敏性能。实验表明,所搭建的InSe场效应晶体管具有良好的电学性能,并在室温下对NO2具有良好的响应。
Bulk indium selenide (InSe) crystals were synthesized by chemical meteorological deposition (CVD). The bulk InSe crystals were characterized and two-dimensional (2D) InSenanosheets were obtained by mechanical peeling-off method. Field effect transistors (FETs) were also constructed to investigate the electrical properties of InSenanosheets, and the gas sensitivity of the devices to nitrogen dioxide (NO2) was tested. The experiments show that the constructed InSe FET has good electrical performance and good response to NO2 at room temperature.
出处
《应用物理》
2024年第1期25-30,共6页
Applied Physics
