摘要
We calculate numerically the quantum capacitance of a nanocapacitor formed of oxide-silicon layers deposited alternately with their widths following a Cantor set structure. We show that this configuration brings about a nano-hybrid capacitor which allows a classical and quantum behavior depending on the Cantor generation. In addition, we propose an approximate equivalent circuit representation for the nano-hybrid capacitor.
We calculate numerically the quantum capacitance of a nanocapacitor formed of oxide-silicon layers deposited alternately with their widths following a Cantor set structure. We show that this configuration brings about a nano-hybrid capacitor which allows a classical and quantum behavior depending on the Cantor generation. In addition, we propose an approximate equivalent circuit representation for the nano-hybrid capacitor.
