We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes(CMQD-SLDs)with and without direct Si doping in QDs.It was found that both the output power and the ...We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes(CMQD-SLDs)with and without direct Si doping in QDs.It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs.The output power and spectral width have been increased by approximately 18.3%and 40%,respectively.Moreover,we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm.In addition,the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm,respectively,through anti-reflection coating and device packaging.The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest.The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs,optimization of device structure and device packaging.展开更多
We report 25 Gb/s high-speed directly modulated ground-state operation of 1.3 μm In As/Ga As quantum dot(QD) lasers grown by molecular beam epitaxy. The active region of the lasers consists of eight layers of p-doped...We report 25 Gb/s high-speed directly modulated ground-state operation of 1.3 μm In As/Ga As quantum dot(QD) lasers grown by molecular beam epitaxy. The active region of the lasers consists of eight layers of p-doped In As QDs with high uniformity and density. Ridge-waveguide lasers with a 3-μm-wide and 300-μm-long cavity show a low threshold current of 14.4 m A at 20°C and high temperature stability with a high characteristic temperature of 1208 K between 20°C and 70°C. Dynamic response measurements demonstrate that the laser has a 3 d B bandwidth of 7.7 GHz at 20°C and clearly opened eye diagrams even at high temperatures up to 75°C under a 25 Gb/s direct modulation rate.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos.62035012,62074143,and 62004191)Zhejiang Lab (Grant No.2020LC0AD02)
文摘We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes(CMQD-SLDs)with and without direct Si doping in QDs.It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs.The output power and spectral width have been increased by approximately 18.3%and 40%,respectively.Moreover,we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm.In addition,the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm,respectively,through anti-reflection coating and device packaging.The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest.The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs,optimization of device structure and device packaging.
基金supported by the National Key Research&Development(R&D)Program of China(No.2016YFB0402302)the National Natural Science Foundation of China(Nos.91433206,61574139 and61841403)
文摘We report 25 Gb/s high-speed directly modulated ground-state operation of 1.3 μm In As/Ga As quantum dot(QD) lasers grown by molecular beam epitaxy. The active region of the lasers consists of eight layers of p-doped In As QDs with high uniformity and density. Ridge-waveguide lasers with a 3-μm-wide and 300-μm-long cavity show a low threshold current of 14.4 m A at 20°C and high temperature stability with a high characteristic temperature of 1208 K between 20°C and 70°C. Dynamic response measurements demonstrate that the laser has a 3 d B bandwidth of 7.7 GHz at 20°C and clearly opened eye diagrams even at high temperatures up to 75°C under a 25 Gb/s direct modulation rate.
